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MOSFET equivalent K8A60DA

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  • tofik
    Member
    • Dec 2022
    • 26
    • UK

    #1

    MOSFET equivalent K8A60DA

    Hello guys,

    I have a shorted MOSFET K8A60DA with the following characteristics:
    Type Designator: TK8A60DA
    Marking Code: K8A60DA
    Type of Transistor: MOSFET
    Type of Control Channel: N -Channel
    Maximum Power Dissipation (Pd): 45 W
    Maximum Drain-Source Voltage |Vds|: 600 V
    Maximum Gate-Source Voltage |Vgs|: 30 V
    Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
    Maximum Drain Current |Id|: 7.5 A
    Maximum Junction Temperature (Tj): 150 °C
    Total Gate Charge (Qg): 20 nC
    Rise Time (tr): 25 nS
    Drain-Source Capacitance (Cd): 100 pF
    Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
    Package: TO220SIS



    Can I use the one from below as a replacement (in TV supply board)?

    12N65 MOSFET:
    Type Designator: 12N65
    Type of Transistor: MOSFET
    Type of Control Channel: N -Channel
    Maximum Power Dissipation (Pd): 140 W
    Maximum Drain-Source Voltage |Vds|: 650 V
    Maximum Gate-Source Voltage |Vgs|: 30 V
    Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
    Maximum Drain Current |Id|: 12 A
    Maximum Junction Temperature (Tj): 150 °C
    Total Gate Charge (Qg): 58 nC
    Rise Time (tr): 28 nS
    Drain-Source Capacitance (Cd): 195 pF
    Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm
    Package: TO220AB


    or 10N65:
    Type Designator: 10N65
    Type of Transistor: MOSFET
    Type of Control Channel: N -Channel
    Maximum Power Dissipation (Pd): 178 W
    Maximum Drain-Source Voltage |Vds|: 650 V
    Maximum Gate-Source Voltage |Vgs|: 30 V
    Maximum Drain Current |Id|: 10 A
    Maximum Junction Temperature (Tj): 150 °C
    Rise Time (tr): 69 nS
    Drain-Source Capacitance (Cd): 166 pF
    Maximum Drain-Source On-State Resistance (Rds): 0.72 Ohm
    Package: TO-263 TO-220 TO-262 TO-220F TO-220F1 TO-220F2


    or FQPF5N60C:
    Type Designator: FQPF5N60C
    Type of Transistor: MOSFET
    Type of Control Channel: N -Channel
    Maximum Power Dissipation (Pd): 33 W
    Maximum Drain-Source Voltage |Vds|: 600 V
    Maximum Gate-Source Voltage |Vgs|: 30 V
    Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
    Maximum Drain Current |Id|: 4.5 A
    Maximum Junction Temperature (Tj): 150 °C
    Total Gate Charge (Qg): 15 nC
    Rise Time (tr): 42 nS
    Drain-Source Capacitance (Cd): 55 pF
    Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
    Package: TO220F



    all datasheets available to download here:
    Code:
    https://drive.google.com/file/d/1DvokkcCS-DBOWRYAQPfgYVpYdiPWVd-j/view?usp=sharing
  • mon2
    Badcaps Legend
    • Dec 2019
    • 16413
    • Canada

    #2
    Re: MOSFET equivalent K8A60DA

    The first 2 replacements are fine to use as they exceed the specs of the original. The last one, no.

    Comment

    • stj
      Great Sage 齊天大聖
      • Dec 2009
      • 31823
      • Albion

      #3
      Re: MOSFET equivalent K8A60DA

      just make sure if the original was insulated from the heatsink the replacement is too.

      Comment

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