MOSFET equivalent K8A60DA

[stj]

Re: MOSFET equivalent K8A60DA

just make sure if the original was insulated from the heatsink the replacement is too.

[mon2]

Re: MOSFET equivalent K8A60DA

The first 2 replacements are fine to use as they exceed the specs of the original. The last one, no.

[tofik]

Hello guys,

I have a shorted MOSFET K8A60DA with the following characteristics:
Type Designator: TK8A60DA
Marking Code: K8A60DA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
Package: TO220SIS


Can I use the one from below as a replacement (in TV supply board)?

12N65 MOSFET:
Type Designator: 12N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 140 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 58 nC
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 195 pF
Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm
Package: TO220AB

or 10N65:
Type Designator: 10N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 178 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 69 nS
Drain-Source Capacitance (Cd): 166 pF
Maximum Drain-Source On-State Resistance (Rds): 0.72 Ohm
Package: TO-263 TO-220 TO-262 TO-220F TO-220F1 TO-220F2

or FQPF5N60C:
Type Designator: FQPF5N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 33 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 42 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO220F


all datasheets available to download here:

https://****************/file/d/1DvokkcCS-DBOWRYAQPfgYVpYdiPWVd-j/view?usp=sharing