I am curious about how to measure the ON resistance of a bipolar transistor (of which the datasheet does not specify) at varying Base to Emitter voltages, whereas MOSFET datasheets specify an ON resistance at a given Gate to Source voltage.
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Measuring bipolar transistor ON resistance
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Re: Measuring bipolar transistor ON resistance
The data is given you just don't know how to interpret it. The parameter you are interested in is Vce (sat) which is the static voltage drop of the bipolar transistor when it is saturated ie fully ON. Vce (sat) times the RMS current going thru the transistor, gives the power dissipation of the device.
As far as i remember (big bipolars are too slow for my taste so i don't work with them too often), in most datasheets there is also a Vce (sat) vs Ib plot. Same as Vgs vs Rdson for mosfets.Last edited by Th3_uN1Qu3; 03-27-2011, 08:48 AM.Originally posted by PeteS in CARemember that by the time consequences of a short-sighted decision are experienced, the idiot who made the bad decision may have already been promoted or moved on to a better job at another company.
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