Hello!
Msi MS 6337 816EPT PRO ver5
Problem: 1 cap bad and 1 mosfet bad (see pics)
Specs:
Cap: Teapo, 1000uF, 6,3v, 105C
Mosfet: Panasonic,
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
PHD45N03LT in SOT428 (D-PAK)
Reference JEDEC TO 252
VDS drain-source voltage (DC) Tj = 25 to 175 °C - 25 V
ID drain current (DC) Tmb = 25 °C; VGS = 5 V - 45 A
Ptot total power dissipation Tmb = 25 °C - 86 W
Tj junction temperature - 175 °C
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A 16 - 21 mOhm
VGS = 5 V; ID = 25 A 20 - 24 mOhm
It is possible that another component was damaged when cap and mosfet died ?
Replacing the cap is not a problem, but the mosfet is. Can I replace it with another using
aprox specs or it's a must for the specs to be the same?
I found these mosfet candidates from salvaged boards:
Infineon:
VDS - 25 V
ID - 50 A
Ptot - 83 W
Tj - 175 °C
RDSon VGS = 10 V; ID = 30 A 5,0 - 5,9 mOhm
VGS = 4,5 V; ID = 30 A 7,7 - 9,6 mOhm
Fairchild Semiconductor:
VDS - 30 V
ID - 46 A
Ptot - 50 W
Tj - 150 °C
RDSon VGS = 10 V; ID = 12 A 12,5 mOhm
VGS = 4,5 V; ID = 12 A 16 mOhm
Thank you in advance for any advice or information.
Msi MS 6337 816EPT PRO ver5
Problem: 1 cap bad and 1 mosfet bad (see pics)
Specs:
Cap: Teapo, 1000uF, 6,3v, 105C
Mosfet: Panasonic,
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
PHD45N03LT in SOT428 (D-PAK)
Reference JEDEC TO 252
VDS drain-source voltage (DC) Tj = 25 to 175 °C - 25 V
ID drain current (DC) Tmb = 25 °C; VGS = 5 V - 45 A
Ptot total power dissipation Tmb = 25 °C - 86 W
Tj junction temperature - 175 °C
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A 16 - 21 mOhm
VGS = 5 V; ID = 25 A 20 - 24 mOhm
It is possible that another component was damaged when cap and mosfet died ?
Replacing the cap is not a problem, but the mosfet is. Can I replace it with another using
aprox specs or it's a must for the specs to be the same?
I found these mosfet candidates from salvaged boards:
Infineon:
VDS - 25 V
ID - 50 A
Ptot - 83 W
Tj - 175 °C
RDSon VGS = 10 V; ID = 30 A 5,0 - 5,9 mOhm
VGS = 4,5 V; ID = 30 A 7,7 - 9,6 mOhm
Fairchild Semiconductor:
VDS - 30 V
ID - 46 A
Ptot - 50 W
Tj - 150 °C
RDSon VGS = 10 V; ID = 12 A 12,5 mOhm
VGS = 4,5 V; ID = 12 A 16 mOhm
Thank you in advance for any advice or information.
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