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    Cross conduction and thermal runaway

    Hello all

    I have posted this problem on other forums too, hoping for some ideas and suggestions.

    I have designed a power amp to deliver around 20W into a 1 Ohm load at 200KHz sine. The amplitude is more or less constant, the frequency is constant, the load varies a bit. The supply rails are +/-12V. My design uses 2 or 3 pairs of output transistors (2 pairs did not work well, tried 3 pairs still no go).

    The amplifier works perfectly until we reach a point where the load gets too heavy (too small) in conjunction with a high amplitude signal. At that moment, we get immedaite thermal runaway so fast that the heat hardly makes it out of the transistor cases and cross-conduction - chicken and egg - I am not sure what causes what.

    The problem is immediately fixable by not letting the load drop so low, or by simpoly adding another volt to the supply rails. I attach 3 scope snapshots taken at the emitter resistors.

    The first picture shows normal operation, load is around 2-2.5 Ohms. You can see the transistors opening and closing properly without overlaps.

    Second picture shows what happens when the load gets too low, a few seconds in the transistors have already remained open for far longer in the cycle than they should resulting in thermal runaway and current limit kicking in.

    Third picture shows the problem corrected by increasing the rails by 1.5V.

    If anyone has experience with RF power amps please help.
    Attached Files

    #2
    Re: Cross conduction and thermal runaway

    Sch of this project?
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    Comment


      #3
      Re: Cross conduction and thermal runaway

      what transistors are you using?

      Comment


        #4
        Re: Cross conduction and thermal runaway

        NEI = Not enough information
        Schematic?
        Devices Used?
        Photo of the prototype?
        Output power and waveform requirements?
        Load impedance?
        Source?
        Feedback type?

        Thoughts: Cross conduction is device specific because the effect is due to a turnoff pulse generated by parasitic inductance. Even so, good design practice is to include dead time in the drive between the upper and lower FET. (none seen in your photos). Increasing the supply rails or altering other circuit variables changes the parasitic inductance equation - no surprise there. Why aren't you running the outputs in class AB? Then, they wouldn't have to turn off.

        If your class assignment is to produce a low distortion RF sinewave, why not run parallel FET's in class A? RF power amps as a rule rely on filtering that fits the application, instead of on a low distortion output stage.
        Is it plugged in?

        Comment

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