This FDV301N, FDV301N-F169 N−Channel logic level enhancement mode field effect transistor is produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.
FDV301N, FDV301N-F169 Features
• 25 V, 0.22 A Continuous, 0.5 A Peak
- RDS(on) = 5 @ VGS = 2.7 V
- RDS(on) = 4 @ VGS = 4.5 V
• Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V
• Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body Model
• Replace Multiple NPN Digital Transistors with One DMOS FET
• This Device is Pb−Free and Halide Free
FDV301N, FDV301N-F169 Features
• 25 V, 0.22 A Continuous, 0.5 A Peak
- RDS(on) = 5 @ VGS = 2.7 V
- RDS(on) = 4 @ VGS = 4.5 V
• Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V
• Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body Model
• Replace Multiple NPN Digital Transistors with One DMOS FET
• This Device is Pb−Free and Halide Free
