Resistive RAM sets chip companies racing
Peter Clarke
EE Times
(04/24/2006 9:34 AM EDT)
Peter Clarke
EE Times
(04/24/2006 9:34 AM EDT)
LONDON — A reversible resistance change process observed in thin oxide films has enabled the creation of a novel form of non-volatile memory that could come to market as a test product this year, according to a technology analysis report from Web-Feet Research.
Resistive RAM (RRAM) development is a focus for several device manufacturers because it promises high density, low cost and low power consumption, according to semiconductor production equipment maker Tegal Corp. (Petaluma, Calif.), which has provided equipment to researchers. Like many other technologies before it, RRAM promises to provide a replacement for flash memory, if and when that technology should have problems scaling.
Resistive RAM (RRAM) development is a focus for several device manufacturers because it promises high density, low cost and low power consumption, according to semiconductor production equipment maker Tegal Corp. (Petaluma, Calif.), which has provided equipment to researchers. Like many other technologies before it, RRAM promises to provide a replacement for flash memory, if and when that technology should have problems scaling.