Rambus awarded $306.9 million in Hynix case
Spencer Chin
EE Times
(04/24/2006 2:09 PM EDT)
Spencer Chin
EE Times
(04/24/2006 2:09 PM EDT)
MANHASSET, N.Y. — A federal jury has awarded Rambus Inc. $306.9 million in a patent infringement dispute with South Korean chip maker Hynix Semiconductor Inc.
A jury in the U.S. District Court for Northern California in San Jose agreed with Rambus's claim that Hynix infringed a number of patents covering fundamental aspects of dynamic random access memory, or DRAM, the main type of memory used in computers.
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The verdict is expected to give Rambus leverage to press similar cases against Samsung Electronics Co., Micron Technology Inc. and Nanya Technology Corp. It also improves Rambus's chances of winning royalties it seeks from manufacturers in the memory industry.
A jury in the U.S. District Court for Northern California in San Jose agreed with Rambus's claim that Hynix infringed a number of patents covering fundamental aspects of dynamic random access memory, or DRAM, the main type of memory used in computers.
...
The verdict is expected to give Rambus leverage to press similar cases against Samsung Electronics Co., Micron Technology Inc. and Nanya Technology Corp. It also improves Rambus's chances of winning royalties it seeks from manufacturers in the memory industry.
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