N-channel 600 V, 1.2 Ω typ., 5 A SuperMESH Power MOSFET in a DPAK package
STD5NK60ZT4 Features
• STD5NK60ZT4 600V 1.6Ω 5A
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
STD5NK60ZT4 Applications
• Switching applications
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
STD5NK60ZT4 Features
• STD5NK60ZT4 600V 1.6Ω 5A
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
STD5NK60ZT4 Applications
• Switching applications
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.